Abstract
We present a model for the injection of minority carriers into porous silicon films which results in visible dc electroluminescence. A thin interfacial dielectric region is postulated between the surface of the porous silicon layer and a transparent conductive oxide on the surface, which allows alignment of states between the two corresponding conduction bands of these materials under bias, and hence, overlap of electron wave functions and the passage of a tunneling current. Interface state densities are calculated and a parasitic nonradiative shunt current through such states is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
