Abstract
We characterized the current injection and electroluminescence (EL) properties of wurtzite (WZ) InP nanowire (NW) light-emitting diodes (LEDs) with axial junctions. The EL spectra of two samples with the same LED junction structure exhibited two different behaviors. One showed a single EL peak originating from the zinc-blende (ZB)-InP bandgap. The other showed two EL peaks originating from the ZB and WZ phases. This difference in EL behavior is attributed to the difference in the contact position and to depletion layer spreading. Clarification of the origin of the different EL peaks is important for optimizing the NW-LED structure.
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