Abstract

Current-induced spin-torques in two-dimensional (2D) heterostructures have attracted extensive attention due to their importance in understanding the underlying fundamental physics and developing low-power dissipation nanoelectronics. Here, the Permalloy/black phosphorus (BP) bilayer devices are fabricated, and spin-torque ferromagnetic resonance (ST-FMR) measurements are utilized to investigate the spin-torque effect in the heterostructure. An obvious out-of-plane antidamping torque is observed, which could be associated with the broken mirror symmetry of BP. These results show the possibility of manipulating magnetization by semiconductor field-effect devices based on 2D materials and provide a clear avenue for engineering spintronic devices based on 2D materials.

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