Abstract
Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature.
Highlights
We find that the circularly polarized photocurrent caused by CISP is squared with the applied bias voltage and defines this circularly polarized photocurrent due to CISP as the current-induced spin photocurrent
This paper introduces a new method to investigate CISP based on circularly polarized photocurrent without the application of an external magnetic field
We observed the CISP in the p-doped bulk GaAs, and found that the CISP direction of bulk GaAs grown in the (001) direction is similar to the GaAs quantum well grown in the (001) direction, which lies in the sample plane and is perpendicular to the applied electric field direction [23]
Summary
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