Abstract
We investigated the coercive field $H_{\text {c}}$ for domain wall (DW) motion as a function of the current ${I}$ in the ferromagnetic oxide SrRuO3, a model system with narrow DWs for fabricating high-density spintronics devices. The DW is moved by ${I}$ in the direction of the current, and $H_{\text {c}}$ is modulated linearly in ${I}$ . This linear relationship is consistent with an effective magnetic field $H_{\text {eff}}$ driving the DW. The direction of DW motion and the magnitude of $H_{\text {eff}}$ are well described by a model based on the field-like torque arising from the spin relaxation of conduction electrons in the DW.
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