Abstract
We demonstrate spin-valve magnetoresistance (MR) with a current-in-plane (CIP) configuration in (Ga,Fe)Sb/InAs (thickness tInAs nm)/(Ga,Fe)Sb trilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (TC). An MR curve with an open minor loop is clearly observed at 3.7 K in a sample with tInAs = 3 nm, which originates from the parallel-antiparallel magnetization switching of the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb/InAs interfaces. The MR ratio increases (from 0.03 to 1.6%) with decreasing tInAs (from 9 to 3 nm) due to the enhancement of the interface scattering. This demonstration of the spin-valve effect in Fe-doped FMS heterostructures paves the way for device applications of the high-TC FMS.
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