Abstract
In response to the need for a high current, low inductance, low resistance package, International Rectifier have designed the Supertab MOSFET. This new device is capable of carrying currents in excess of 200 A. The Supertab package is different from existing power MOSFET packages in that the source connection is made through a tab rather than a lead. This paper presents a discussion of the way in which a combination of experimental work and computer modelling has been used to develop this high current discrete semiconductor switch package.
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