Abstract
Abstract Although dc current gain has been widely treated, its relation to device reliability is still unavailable. We show here that the variation of current gain of bipolar junction transistors depends upon device operating time and may be used as a failure indicator in case no failure occurs in a test. From the accelerated test data with zero failure, a method for the computation of device age is illustrated and compared with traditional methods. Owing to the composite nature of current gain, we obtain an empirical formula which is useful in providing us a quantitative anticipation of device life. A current gain degradation mechanism is also discussed.
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