Abstract
The existing models of the current flow across planar-doped-barrier (PDB) diodes are based on thermionic emission over the triangular barriers and have successfully predicted the characteristics of diodes with low barriers. However, experimental measurements on planar-doped-barrier (PDB) electron emitters suggest that tunneling can be the dominant transport mechanism across PDB structures with high built-in fields. In this work, we propose a model that takes into account the quantum mechanical effects of the scattering across the barrier and the tunneling through the energy band gap. Good agreement between the theory and experiments has been obtained.
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