Abstract

Based on the extended Landau–Lifshitz–Gilbert method, the properties of current driven domain wall movement in U-shaped magnetic nanowires and the effect of spin wave assistance on their properties have been investigated. The results show that changes of the curvature radius of magnetic nanowire can cause the additional pinning action and the pinning action will weaken the speed of current driven domain wall movement. For U-shaped magnetic nanowires, the changes of curvature radius can be represented by the radius R at the bend. The results show that the decline of its speed non-monotonically increases with the decrease of the bending radius of magnetic nanowires. On the other hand, the assistance of applying spin waves not only enhances the movement of magnetic domain walls but also weakens the pinning action. Further research has shown that applying the appropriate spin waves at the bend changing point can completely eliminate the influence induced by bend changing, in order to ensure uniform and stable movement of current driven magnetic domain walls in U-shaped magnetic nanowires, and achieve the current driven three-dimensional racetrack memory technology.

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