Abstract
Current-driven magnetic orientation reversal at an extremely low threshold current density, as low as 2.0×104A∕cm2, has been achieved in (Ga,Mn)As-based double-barrier magnetic tunneling junctions (MTJs) sandwiched between top and bottom MTJs. The middle magnetic free layer thickness dependence clearly demonstrates that the low threshold current density is owing not only to the small magnetization of the magnetic free layer but also the enhancement of the spin torque caused by a spin-polarized current through the top and bottom MTJs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.