Abstract
Local p-n junction were obtained under room temperature conditions in CuInSe2 by applying strong electric field through small indium and copper contacts. The current density voltage (J-V) and the capacitance-voltage (C-V) of three different samples were measured at room temperature. The J-V method shows that the current is dominated by the drift component of the injected carriers. The C-V method gave a barrier height of 1.04 eV for all three samples which agrees with the reported energy gap of this material. Analysis of these results indicate that the p-n junction structures formed by strong electric fields are hihgly compensated and the current transport is dominated by the space charge limited current effect.
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