Abstract
A 50-keV focused Ga+ beam was used to expose dots in a negative-acting bilevel resist structure in an exposure range between 1 μs/pixel and 4 s/pixel. The radii of the resist dots were used to determine the current-density profiles of the Ga+ ion microprobe down to six orders of magnitude below the peak versus system magnification and ion source current. The effect of the beam profile on the limiting pitch for densely packed resist dot arrays was modeled and compared to experimental results.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
