Abstract
This paper presents an experimental demonstration of a current-controlled negative resistance (CCNR) in the forward characteristics of 6H-SiC P-i-N rectifiers. These forward characteristics indicate that the poor electrical performance of SiC diodes arises because conductivity modulation is not yet established. The cause of this behavior appears to be high defect densities and low minority carrier lifetime in the lightly doped drift region. N/sup +/P junctions exhibit excellent forward characteristics with forward drop of 2.8 V at 100 A/cm/sup 2/ and 3.9 V at 1000 A/cm/sup 2/ without entering the CCNR mode when traps have been filled prior to the measurement.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
