Abstract
Electrical characterizations of CeO 2 gate dielectric on silicon substrates were studied. The dominant conduction mechanisms of the Al/CeO 2 /p-Si structure are the Schottky emission in a medium electric field (∼0.5-1.6 MV/cm) from 350 to 500 K and the Poole-Frenkel emission in a high electric field (≥ 2.36 MV/cm), from 450 to 500 K. The barrier height at the Al/CeO 2 interface and the trap energy level were determined to be about 0.76 ± 0.02 and 1.13 ± 0.01 eV, respectively. The electronic drift mobility in CeO 2 is in the range of 2.7-26 cm 2 /V s.
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