Abstract
Recently, the semiconducting characteristics of BiFeO3 thin films such as the photovoltaic effect or diode characteristics have been extensively investigated. However, the current conduction mechanism has not been completely clarified yet. In this study, the current conduction mechanism of the ideal BFO thin film, which has a single domain without conduction domain walls, such as 71 and 109° domain walls, has been investigated. The current density–electric field (J–E) characteristics of 100- to 1000-nm-thick BFO thin films and their temperature dependence in the range of 100–260 K have been carefully investigated. From these thickness and temperature dependences of the J–E characteristics, it can be concluded that the most probable mechanism of current conduction in the single-domain BFO thin film is space-charge-limited current (SCLC) with a shallow trap.
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