Current-Collapse Suppression of High-Performance Lateral AlGaN/GaN Schottky Barrier Diodes by a Thick GaN Cap Layer

Abstract

In this letter, we demonstrate a high-performance lateral AlGaN/GaN Schottky barrier diode (SBD) using an 80-nm thick GaN cap layer as the passivation layer and a low work-function tungsten (W) layer as the anode. A low turn-on voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{ON}$ </tex-math></inline-formula> ) of 0.38 V and a high breakdown voltage of 2.08 kV are obtained at the same time. Additionally, the normalized dynamic on-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ON,dyn}$ </tex-math></inline-formula> ) becomes only a factor of 1.13 higher than the static on-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ON}$ </tex-math></inline-formula> ) after a 10-s-long bias test at 900 V. Also owing to the impressively stability of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ON,dyn}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{ON}$ </tex-math></inline-formula> under long-duration stress, these lateral GaN SBDs with a thick GaN cap layer show a great potential for the next-generation of power electronic devices.