Abstract
We have investigated current collapse in GaN heterojunction field effect transistors (HFETs) for high voltage power switching applications. With a novel technique in which the gate and drain pulses are controlled independently, we have measured the current collapse under various switching conditions. We found that the current collapse improves under hard switching in which the loadline passes through high current and high voltage area. This was attributed to holes that are generated through impact ionization and compensate trapped electrons at device surface. We show that optimized field plate and surface treatment significantly improves the current collapse for high voltage GaN HFETs.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
