Abstract
A current-assisted single-photon avalanche diode (CASPAD) is presented with a large and deep absorption volume combined with a small p-n junction in its middle to perform avalanche trigger detection. The absorption volume has a drift field that serves as a guiding mechanism to the photo-generated minority carriers by directing them toward the avalanche breakdown region of the p-n junction. This drift field is created by a majority current distribution in the thick (highly-resistive) epi-layer that is present because of an applied voltage bias between the p-anode of the avalanching region and the perimeter of the detector. A first CASPAD device fabricated in 350-nm CMOS shows functional operation for NIR (785-nm) photons; absorbed in a volume of 40 × 40 × 14 μm3. The CASPAD is characterized for its photon-detection probability (PDP), timing jitter, dark-count rate (DCR), and after pulsing.
Highlights
Single-photon avalanche diodes (SPADs) become an integral part of applications which require high photon sensitivity, and/or accurate photon arrival timing
SPAD versions based on complementary metal-oxide semiconductor (CMOS) technology have the advantage of low production cost and the ability to monolithically integrate them with electronic circuitry for read-out and signal processing
Retrograde wells with variable doping profile for generating a built-in electric field. In this we present the current-assisted single-photon avalanche diode (CASPAD) that has a have beenwork, introduced improving the near infrared (NIR) sensitivity of SPADs [8]
Summary
Single-photon avalanche diodes (SPADs) become an integral part of applications which require high photon sensitivity, and/or accurate photon arrival timing. Increasing the detection area increases the diode capacitance which in turn leads to a larger dead time of the detector Sensitivity in near infrared (NIR) wavelengths, so important to many applications, is horizontal depletion region of the avalanching junction (several microns). Retrograde wells with posing problems, because the associated large photon penetration (10 μm–20 μm) depth is difficult variable doping profile for generating a built-in electric field have been introduced improving the NIR to match with the limited thickness of the horizontal depletion region of the avalanching junction sensitivity of SPADs [8]. Retrograde wells with variable doping profile for generating a built-in electric field In this we present the current-assisted single-photon avalanche diode (CASPAD) that has a have beenwork, introduced improving the NIR sensitivity of SPADs [8]. APDs in III-V semiconductors exist having infrared sensitivity, are not in CMOS and require 3D hybrid stacking for read-out and signal-processing circuitry
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