Abstract
The apparent current-controlled negative resistance resulting from current and triangular voltages in memory and nonmemory devices is considered to be due to hot electron injection fom the ZnS layer into the insulating layer. Further studies of the current wave in memory devices has revealed a voltage-controlled negative resistance. This fact is used to construct a two-level model of primary electron sources for impact excitation to explain the memory behavior of such devices. The model takes account of the interface state for initial high-field excitation and the trap level for sustaining low-field excitation.
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