Abstract
We present an investigation of the Curie temperature ${(T}_{c})$ modulation in semiconductor quantum wells. The combined effects of applied electric fields and p-type doping are considered for a system that consists of a Mn $\ensuremath{\delta}$-doped well, a barrier, and a p-type-doped well. The amount of supplied holes from the p-type-doped well to the Mn $\ensuremath{\delta}$-doped well is controlled by the applied electric fields. We calculate the change in the envelope functions of carriers at the lowest-energy subband resulting from applied electric fields. By applying 1.5 meV/nm electric fields, we can enhance ${T}_{c}$ up to 8 times than that without the fields. The ferromagnetic transition temperature strongly depends on a position of the Mn $\ensuremath{\delta}$-doped layer and asymmetry of quantum wells.
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