CuPc nanowires transistors fabricated by vacuum thermal deposition

Abstract

ABSTRACTOrganic semiconductor nanowires have received much attention because of their superior performance compared with their thin film counterparts. In this paper, we fabricated large amount of oriented CuPc nanowires by weak epitaxy growth of CuPc on p-6P bilayer. These nanowires possess diameter of 0.4∼1.2 µm and length of several micrometers. With such method, CuPc nanowire transistors can be fabricated, and the high mobility up to 0.37 cm2/Vs has been realized.