Abstract
This letter reports the fabrication of copper-oxide (CuO) single-nanowire (SNW) back-to-back Schottky diode for white light detection. The device fabrication includes the synthesis of nanowires by thermal oxidation of copper, followed by microcantilever contact print ( $\mu $ CCP) of silver nanoparticles (AgNP) electrodes. The metal-semiconductor-metal (MSM) structure exhibits a dark current of 1.40 nA and photocurrent of $2.55~\mu \text{A}$ for ±6 V bias. The AgNP/CuO SNW/AgNP device reveals a sharp rise and recovery for continuous operation under the bias stress. Further, fabricated device exhibits a remarkable photodetection with photosensitivity 1820, responsivity 4085 AW−1, detectivity ${3.81}\times {10}^{{13}}$ cmHz0.5 W−1, and external quantum efficiency of ${9.95}\times {10}^{{5}}$ %.
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