Abstract
CuInSe2 thin films were prepared by electrodeposition from aqueous solution, containing CuSO4, InCl3 and SeO2 under d.c. step pulse-voltage on d.c., and pulse-plating conditions. The films were characterized by scanning electron microscopy, energy dispersive spectrometry and X-ray diffraction. The influence of deposition technique on film composition, morphology and structure were studied. Heat treatment of pulse-plated films under vacuum resulted in the formation of CuInSe2 with single-phase chalcopyrite structure.
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