Abstract
The horizontal modification of the Bridgman–Stockbarger method was applied to grow the solid solutions of CuInS2-ZnIn2S4, containing 4 to 16 mol% of ZnIn2S4. The crystal structure was analyzed by the X-Ray analysis. The induced photoconduction was identified in the single crystals containing 8 to 12 mol% of ZnIn2S4 by measuring the photocurrent spectra at T ≈ 30 K. The model of two recombination centers with different capture cross sections was proposed to explain it. Indium vacancies or substitutional defects CuIn were assumed to be the fast recombination centers, meanwhile copper vacancies VCu behave as the slow recombination centers. The measurements of the temperature dependencies of electrical conductivity and thermally stimulated currents confirmed presence of the electrically active shallow defects in these n-type samples.
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