Cubic ZnO films obtained at low pressure by molecular beam epitaxy**Project supported by the National Natural Science Foundation of China (Grant Nos. 11204253, U1232110, U1332105, 61227009, and 91321102), the Fundamental Research Funds for Central Universities, China (Grant No. 2013SH001), and the National High Technology Research and Development Program of China (Grant No. 2014AA052202).

Abstract

A zinc oxide thin film in cubic crystalline phase, which is usually prepared under high pressure, has been grown on the MgO (001) substrate by a three-step growth using plasma-assisted molecular beam epitaxy. The cubic structure is confirmed by in-situ reflection high energy electron diffraction measurements and simulations. The x-ray photoelectron spectroscopy reveals that the outer-layer surface of the film (less than 5 nm thick) is of ZnO phase while the buffer layer above the substrate is of ZnMgO phase, which is further confirmed by the band edge transmissions at the wavelengths of about 390 nm and 280 nm, respectively. The x-ray diffraction exhibits no peaks related to wurtzite ZnO phase in the film. The cubic ZnO film is presumably considered to be of the rock-salt phase. This work suggests that the metastable cubic ZnO films, which are of applicational interest for p-type doping, can be epitaxially grown on the rock-salt substrates without the usually needed high pressure conditions.