Abstract
This overview, based on earlier published papers, concerns the growth and some properties of single and polycrystalline cubic silicon carbide (3C-SiC) prepared by thermal decomposition of methyl trichlorosilane in hydrogen on resistively heated graphite substrates in a temperature range of 1500 to 2100 K. The morphology of faceted crystals and their specific twin structure, as well as the effects of crystallographic polarity of the 3C-SiC structure (sphalerite type) on impurity segregation and etching are considered in some detail.
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