Abstract
Cubic InN layers were grown by molecular beam epitaxy on buffer layers of indium oxide prepared onto sapphire (0001) substrates. The structure was analyzed by means of electron diffraction and transmission electron microscopy. The intermediate indium oxide layer presents a body centered cubic (bcc) structure, with bcc-In2O3(001)‖Al2O3(0001) plane relationship. Thereupon, a zinc-blende phase of InN (001) was grown with a reticular misfit of 1.6% and a significant reduction of mismatch-related defects. This good coherence offers a promising expectation to obtain high quality cubic InN layers superior to other highly mismatched cubic substrates used previously.
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