Cubic GaN growth on (311)A GaAs substrate by MOVPE

Abstract

AbstractCubic GaN layers has been grown on (311)A GaAs substrates by MOVPE at relatively high growth temperature at 900 °C. Cubic GaN (311) grew on the (311)A GaAs with and in‐plane epitaxial relationship of [01‐1]GaN//[01‐1]GaAs and [200]GaN//[200]GaAs. Full width at half maximum of the cubic GaN (002) X‐ray rocking curve is less than 20 arc min, which is comparable to that of the cubic GaN grown on (001) substrate. The lattice constant is in the range of 4.502 to 4.506 Å. Even at the growth temperature as high as 900 °C, the interface between cubic GaN layer and GaAs substrate is remarkably smooth without any voids, owing to the suppression of the (111) surface steps on the (311)A substrate surface. These results indicate that the (311)A‐oriented GaAs is a candidate substrate for the MOVPE growth of cubic GaN layer in avoiding the thermal decomposition of GaAs and in improving the interface and surface morphologies. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)