Abstract
(GaP)n(InP)n short-period superlattices (SLs) grown on a GaAs (011) substrate by gas-source molecular beam epitaxy (MBE) are studied by transmission electron microscopy (TEM). The satellite spots which indicate the formation of a GaP/InP monolayer superlattice in the [100] direction (CuAu-type ordering) are clearly observed, for the first time, in the (011) transmission electron diffraction (TED) pattern. The (011) plan-view TEM image shows composition modulation along the [100] direction and the self-formation of a straight wire structure with a length of over 1 µm in the [011] direction.
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