Abstract
Cu2ZnSnS4 thin films have been produced via rapid thermal evaporation of off-stoichiometric kesterite powder followed by annealing in an Ar atmosphere. Different heating rates were applied during the thermal treatments. The chemical composition and structural properties of the deposited layers as well as the distribution of the elements through the kesterite thin film have been investigated. The initial growth of a SnS secondary phase during evaporation led to the formation of this secondary phase next to the Mo back contact. Solar cell power conversion efficiencies were limited to values about 3% due to this secondary phase. Furthermore, an increased open circuit voltage was demonstrated by using a Zn(O,S) buffer layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
