Cu2SnS3 thin film solar cells prepared by thermal crystallization of evaporated Cu/Sn precursors in sulfur and tin atmosphere

Abstract

AbstractCu2SnS3 thin films were prepared by crystallization in sulfur and tin mixing atmosphere from the stacked Cu/Sn precursors deposited by sequential evaporation of Sn and Cu elements. From EPMA analysis, the composition of the thin film was approximately constant regardless changing Sn mole ratio in the precursor. However, the composition of inside of the thin films and Mo layer had gradation. The Raman analysis showed that the spectrum corresponded to monoclinic Cu2SnS3. Cu2SnS3 thin films were applied to the fabrication of Cu2SnS3 solar cells. The values of Voc and Isc increased with decreasing Sn mole ratio in the precursor. The largest Voc of 247.5 mV was achieved in sample of Cu/Sn mole ratio of 2/1.2, which is comparable with early reported value of Voc. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)