Cu2S/CIGS core/shell nanowire arrays with epitaxial CIGS growth

Abstract

Cu2S/CuIn0.7Ga0.3Se2 (Cu2S/CIGS) core/shell nanowire arrays with epitaxial CIGS growth are synthesized by electrodepositing CIGS on Cu2S nanowire arrays. The electrodeposited CIGS is tetragonal CuIn0.7Ga0.3Se2 with a band gap of 1.310eV. The crystal structure of Cu2S is similar to that of CIGS. The interplanar distance of Cu2S (2¯04) is also similar to that of CIGS (112), so the CIGS shell grows epitaxially. Absorption measurements show that Cu2S/CIGS core/shell nanowire arrays exhibit higher light absorption than Cu2S nanowire arrays. Fabricating Cu2S/CIGS core/shell nanowire arrays with epitaxial CIGS growth shows promise for the preparation of single crystal CIGS one-dimensional nanostructures.