Abstract
An analysis of Cu2O layer has been conducted for advanced thin film solar cells based on a tandem heterojunction design with metal oxides, in order to evaluate and improve the metal-oxide subcell performance. We have considered a promising cell design with metal oxide active and passive layers. We have used a comparative analysis based on numerical modeling in wxAMPS for device characteristics, with respect to the layer’s thickness and doping. It has been proved that the metal oxides hold great potential of optimization and have a big impact for the improvement of this design. The assessment has been made for the Cu2O/ZnO segment cell, as a basis, with the position of the defects in the middle of the band gap. The simulation methodology could be used for design and material performance optimization. The calculated values were compared with the experimental ones reported in the literature.
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