Abstract

Herein, F-doped Cu2O thin films with different F content are first synthesized on the ITO glass via a simple electrochemical deposition method. The prepared F-doped Cu2O thin films present n-type semiconductor character and show significantly high electronic and optical properties, especially for the one with preparation molar ratio of F/Cu = 1:2. This sample owns a unique net microstructure for a best absorption of visible-light and its electron concentration is more than ten times as that of pure Cu2O. Additionally, it has a lowest resistivity, which is beneficial for photogenerated charge transfer and the decrease of electron–hole pair recombination. The F-doped Cu2O films are utilized to fabricate Cu2O homojunction solar cells by consecutive electrochemical depositions. The conversion efficiency of the best homojunction solar cell with the F-doped Cu2O as n-type layer is nearly eight times as that with pure Cu2O as n-type layer. Hence, this study provides a strategy to improve the properties of Cu2O t...

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call