Abstract

Composite material with high thermal conductivity was obtained by the method of thermal sintering of diamonds (synthetic and impact) and copper powder and by further hot isostatic pressing. The content of diamond (the particle size is 20 - 250 μm) in the diamond copper composite was 30 - 45 weight percent. The coefficient of thermal conductivity of copper diamond composite materials based on synthetic diamonds was measured to be 700 - 750 Wm-1K-1. The coefficient of thermal conductivity of copper diamond composite materials based on impact diamonds was measured to be 850 - 900 Wm-1 K-1. The coefficient of thermal expansion (CTE) was measured to be 5.5 - 6.5 • 10-6/°C for synthetic diamonds and 6.1 - 6.5 •10-6/°C for impact diamonds. The obtained copper diamond composite materials are promising to be used as crystal holders for semiconductor crystals in THz and microwave devices.

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