Abstract
In this study, we prepare Cu(ReTa) and Cu(ReTaNx) films via reactive cosputtering of copper (Cu), rhenium (Re), and tantalum (Ta) on a barrierless silicon (Si) substrate in an argon–nitrogen (Ar–N2) atmosphere. These Cu(ReTa) and Cu(ReTaNx) films, after annealing at 630 and 750 °C for 1 h, exhibit two values of resistivity, viz., 3.05 and 2.35 µΩ cm, respectively, showing high thermal stability without copper-silicide formation. The Cu(ReTaNx) film's up-to-750 °C high-temperature stability, while maintaining a low leakage current and resistivity, appears to make it a good candidate material for advanced barrierless metallization for simplifying related electronic-device manufacturing processes, and, consequently, reducing the related manufacturing cost. Applying X-ray diffraction (XRD), focused ion-beam microscopy, and transmission electron microscopy (TEM) to evaluate said film, we observed that the Cu seed layer-Si interface showed no detrimental reaction after the film was annealed at 750 °C for 1 h. The film, hence, is recommended for the desired purpose.
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