Cu ( ReNx ) for Advanced Barrierless Interconnects Stable Up To 730 ° C

Abstract

This paper reports the superior properties of a Cu interconnect cosputtered with a minor on barrierless Si. After heating at for , there is no observable interaction between and Si. The film remains stable after five cycles of heating at for a total of . The film resistivity is high in the as-deposited condition, and yet it decreases to upon heating. The leakage current is about 3 orders of magnitude lower than that of pure Cu. Furthermore, the film adhesion on Si is also improved noticeably. The film is thus useful for advanced barrierless interconnects.