Cu‐Phosphorus Eutectic Solid Solution for Growth of Multilayer Graphene with Widely Tunable Doping

Abstract

AbstractA one‐step chemical vapor deposition (CVD) is proposed to grow multilayer graphene (MLG) with tunable doping types using a copper–phosphorus eutectic system as a catalyst. At the growth temperature, the phosphorus‐dissolved copper forms a liquid phase, which promotes the formation of phosphorus‐doped MLG. With this method, the thickness and doping level of graphene are simultaneously controlled at the synthesis stage. Moreover, the proposed CVD method enables patterned growth of MLG at the microscale. The resultant phosphorus‐doped graphene demonstrates a tunable doping state from large n‐type doping to p‐type doping because of the high affinity of phosphorus to water molecules. Finally, stable n‐type doping of MLG by passivating it with a parylene thin film is demonstrated.