Year-end Sale % OFF 
Abstract
AbstractA one‐step chemical vapor deposition (CVD) is proposed to grow multilayer graphene (MLG) with tunable doping types using a copper–phosphorus eutectic system as a catalyst. At the growth temperature, the phosphorus‐dissolved copper forms a liquid phase, which promotes the formation of phosphorus‐doped MLG. With this method, the thickness and doping level of graphene are simultaneously controlled at the synthesis stage. Moreover, the proposed CVD method enables patterned growth of MLG at the microscale. The resultant phosphorus‐doped graphene demonstrates a tunable doping state from large n‐type doping to p‐type doping because of the high affinity of phosphorus to water molecules. Finally, stable n‐type doping of MLG by passivating it with a parylene thin film is demonstrated.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
