Abstract
An atmosphere pressure plasma (APP) deposition system with dielectric barrier discharge (DBD) is proposed for deposition selenium thin films. Several advantages of the APP deposition system are low cost, high processing speed and its potential to be applied in roll-to-roll process. Morphologies and thicknesses of selenium thin films deposited on In/CuGa/Mo/SLG can be affected by plasma power which also has impact on crystallinity of CIGS absorber. With the increase in plasma power, CIGS grains tend to distribute non-uniformly. Plasma power of 100W has the smallest FWHM of the main peak (112). Insufficient selenium incorporation into precursors result in undesired phases such as Cu3Se2, Cu2Se and separation phase, CuGaSe2 ¬compound. Compositions of optimal selenized CIGS thin film deposited by scanning 180 times are Cu/(In+Ga) = 1.03 and Ga/(In+Ga) = 0.24.
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