Abstract

This paper reports the superior properties of Cu(Ge,Zr) films deposited by cosputtering on barrierless Si substrates. After being annealed, a self-forming ZrGex/Cu3Ge layer and a ZrOx (ZrSiyOx)/Cu3Ge layer, respectively, are formed during a sequence of solid-state reactions between the Cu(Ge,Zr) layer and adjacent layers and they could effectively hinder mutual diffusion between Cu and Si, presenting at the interface of the Cu/Cu(Ge,Zr)/Si film stacks. Leakage current and resistivity evaluations reveal the excellent thermal reliability of this Cu(Ge,Zr) film at temperatures up to 650 °C, suggesting its potential application in advanced barrierless Cu metallization. The mechanisms involved are analysed based on detailed characterization studies.

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