Abstract
This letter covers the fabrication of a nonpolar resistive switching (RS) random access memory device using Cu-embedded AlN and its reproducible RS characteristics. The AlN-based memory device shows endurance of >; 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> , reliable retention time (ten years extrapolation at both room temperature and 85°C), and fast programming speed under 100-ns pulses in unipolar operation mode. The switching mechanism is believed to be mediated by the formation and rupture of conductive Cu filaments.
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