Abstract
We fabricated Cu-doped TiNxOy thin film resistors by using atomic layer deposition, optical lithography, dry etching, Ti/Cu/Ti/Au e-beam evaporation and lift-off processes. The results of the measurements of the resistance temperature dependence, non-linearity, S-parameters at 0.01–26 GHz and details of the breakdown mechanism under high-voltage stress are reported. The devices’ sheet resistance is 220 ± 8 Ω/□ (480 ± 20 µΩ*cm); intrinsic resistance temperature coefficient (TCR) is ~400 ppm/°C in the T-range of 10–300 K; and S-parameters versus frequency are flat up to 2 GHz with maximum variation of 10% at 26 GHz. The resistors can sustain power and current densities up to ~5 kW*cm−2 and ~2 MA*cm−2, above which they switch to high-resistance state with the sheet resistance equal to ~200 kΩ/□ (~0.4 Ω*cm) caused by nitrogen and copper desorption from TiNxOy film. The Cu/Ti/TiNxOy contact is prone to ageing due to gradual titanium oxidation while the TiNxOy resistor body is stable. The resistors have strong potential for applications in high-frequency integrated and hybrid circuits that require small-footprint, medium-range resistors of 0.05–10 kΩ, with small TCR and high-power handling capability.
Highlights
There is a steady technology trend in wireless communications towards the system-onchip (SoC) solutions [1,2,3]
This paper reports the measurements results of the Titanium oxynitride (TiNx Oy) thin film resistors temperature coefficient of resistance (TCR), nonlinearity in extended temperature range from 10 to 400 K, S-parameters at RF, high-power handling capability, performance as fusible resistors and aging effects
Resistors studied in this work were formed from the lightly Cu-doped TiNx Oy films (G1-samples) [8] that were grown on a mirror finished 500 μm thick CT-32-1 Sitall (SIT)
Summary
There is a steady technology trend in wireless communications towards the system-onchip (SoC) solutions [1,2,3]. The high potential of this new hybrid technology is in its relatively low cost, small circuit footprint, ease in combining different materials and components, flexibility in the choice of substrate and enhanced yield and frequency band-width. All of these factors considerably expand the circuit physical parameters’ design space and allows the designer to better optimize the circuit performance. We have demonstrated a simple innovative ALD technology growth technique of Cu-doped TiNx Oy thin film with high uniformity that is suitable for further device fabrication [8]. A simplified compact model of the resistors is extracted from simulations matched to the S-parameters’ high-frequency measurements
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