Abstract
For realizing high aspect ratio TSV with a low cost, the all-wet process utilizing electroless barrier and Cu-seed layers prior to Cu electroplated fill is one of the most promising methods. However, improvement of adhesion property of electroless plated barrier and seed layers on SiO2 has been intensively required. In this study, we studied displacement plating of Cu on electroless CoWB layer formed on SiO2 in an acidic bath. It turned out that displacement-plated Cu film grew with sacrifice of the partial CoWB layer, and showed a high adhesion strength that was enough to pass CMP process.
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