Abstract
Three-dimensional integrated circuit(3D IC) technology has become increasingly important due to the demand for high system performance and functionality. In this work, BOE and HF wet etching of Cu line surfaces after CMP were conducted for Cu-Cu pattern direct bonding. Step height of Cu and as well as Cu dishing after Cu CMP were analyzed by the 3D-Profiler. Step height increased and Cu dishing decreased with increasing BOE and HF wet etching times. XPS analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE and HF wet etching treatment. BOE treatment showed not only the effective etching but also reduced dishing and Cu surface oxide rather than HF treatment, which can be used as an meaningful process data for reliable Cu-Cu pattern bonding characteristics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of the Microelectronics and Packaging Society
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
