Abstract
Abstract Flexible perovskite light-emitting devices (Pe-LED) based on Cs0.05(FA0.85MA0.15)0.95Pb(I0.85Br0.15)3 perovskite light emitting layer were synthesized on ITO/PEN substrate, where the low-temperature solution-processed amorphous SnOx as electron injection layer. A dominant infrared electroluminescence was detected from the flexible Pe-LEDs, well agreement with the photoluminescence spectra. Notably, the Pe-LEDs exhibit excellent mechanical bending durability, confirmed by the almost negligible degradation in EL performance compared with the fresh device even after 2000 harsh bending cycles. The mechanism for the outstanding bending resistance was interpreted by electrochemical impedance spectroscopy analysis. Given the multiple advantages of flexible devices, current achievements will definitely expand application of Pe-LEDs.
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