Abstract
The adsorption of Cs layers on Si(100) 2 x 1 is investigated at room temperature (300 K) and low temperature (95 K) by using angular resolved photoemission spectroscopy. At 300 K, Cs are located on one type of site and the coverage at saturation is ≤ 0.5. At 95 K, two kinds of site are populated even at low coverage. Evidence for a metallization is observed for coverage above the WF minimum occuring at ϑ = 0.33. The nature of the adsorption site is discussed.
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