Crystal-originated particles in germanium-doped Czochralski silicon crystal

Abstract

Grown-in distribution and annealing behavior of crystal-originated particles (COPs) in Czochralski silicon (Cz-Si) wafer with germanium doping have been investigated. It was found that COPs with high density but small sizes were inclined to generate in germanium-doped Cz-Si (GCz-Si) wafer. The increase of boron atoms in Cz-Si crystal with the germanium doping could benefit the formation of COPs while the oxygen interstitials in GCz-Si wafer could enhance the generation of COPs with small sizes. Meanwhile, it was suggested that the germanium doping in Cz-Si would result in the poor thermal stability of COPs. It is proposed that the combination between germanium atom and vacancy could reduce the free vacancy concentration and the onset temperature for void generation, thus forming denser but smaller void. While the stress compensation induced by boron and germanium atoms could increase the vacancy fluxes in heavy-boron doped GCz-Si crystal, the presence of oxygen atom in GCz-Si would incline to benefit the formation of inner oxide walls of void, especially with small sizes. Furthermore, thinner oxide walls within void for GCz-Si crystal are considered to be charged for the easy annihilation by the germanium doping.