Abstract
From transmission electron microscopy observations, Al films sputtered on (011)Si substrates were found to grow epitaxially, similar to those on (001)Si and (111)Si substrates. The condition for single crystallization of the epitaxial Al films was obtained by changing heat treatments and Al film thickness. In addition, a simple acceleration test revealed that the electromigration resistance of Al interconnects on a (011)Si substrate was much higher than that on a SiO2 film.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Applied Physics Letters
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
