Abstract
The movement of Au catalysts during growth of InAs on GaAs nanowires has been carefully investigated by transmission electron microscopy. It has been found that Au catalysts preferentially stay on {112}B GaAs sidewalls. Since a {112} surface is composed of a {111} facet and a {002} facet and since {111} facets are polar facets for the zinc-blende structure, this crystallographic preference is attributed to the different interface energies caused by the different polar facets. We anticipate that these observations will be useful for the design of nanowire heterostructure based devices.
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